1 rf power mosfet transistor 15w, 2-175mhz, 12v m/a-com products released; rohs compliant DU1215S ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? n-channel enhancement mode device ? dmos structure ? lower capacitances for broadband operation ? high saturated output power ? lower noise figure than bipolar devices ? specifically designed for 12 volt applications package outline absolute maximum ratings at 25 c parameter rating drain-source voltage 40 gate-source voltage 20 drain-source current 4 power dissipation 87.5 junction temperature 200 storage temperature -55 to +150 thermal resistance 2 symbol v ds v gs i ds p d t j t stg jc units v v a w c c c/w millimeters inches min max min max a 24.64 24.89 .970 .980 b 18.29 18.54 .720 .730 c 20.07 20.83 .790 .820 d 9.47 9.73 .373 .383 e 6.22 6.48 .245 .255 f 5.64 5.79 .222 .228 g 2.92 3.30 .115 .130 h 2.29 2.67 .090 .105 j 4.04 4.55 .159 .179 k 6.58 7.39 .259 .291 l .10 .15 .004 .006 letter dim electrical characteristics at 25c parameter symbol min max units test conditions drain-source breakdown voltage bv dss 40 - v v gs = 0.0 v , i ds = 5.0 ma drain-source leakage current i dss - 1.0 ma v gs = 15.0 v , v gs = 0.0 v gate-source leakage current i gss - 1.0 a v gs = 20.0 v , v ds = 0.0 v gate threshold voltage v gs(th) 2..0 6.0 v v ds = 10.0 v , i ds = 100 ma forward transconductance g m 0.5 - s v ds = 10.0 v , i ds = 1000 ma , v gs = 1.0 v input capacitance c iss - 50 pf v ds = 12.0 v , f = 1.0 mhz output capacitance c oss - 60 pf v ds = 12.0 v , f = 1.0 mhz reverse capacitance c rss - 12 pf v ds = 12.0 v , f = 1.0 mhz drain efficiency ? d 60 - % v dd = 12.0 v, i dq = 100 ma, p out = 15 w f =175 mhz load mismatch vswr-t - 30:1 - v dd = 12.0 v, i dq = 100 ma, p out = 15 w f =175 mhz power gain g p 9.5 - db v dd = 12.0 v, i dq = 100 ma, p out = 15 w f =175 mhz f (mhz) z in ( ? ) z load ( ? ) 30 3.0 - j25 4.0 - j3.0 100 3.0 - j15 3.5 - j1.5 175 5.0 - j8 4.0 - j0.0 v dd = 12v, i dq = 100ma, p out = 15w typical device impedance z in is the series equivalent in put impedance of the device from gate to source. z load is the optimum series equivalent load impedance as measured from drain to ground.
2 rf power mosfet transistor 15w, 2-175mhz, 12v m/a-com products released; rohs compliant DU1215S ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. frequency (mhz) typical broadband performance curves efficiency (%) efficiency vs frequency v dd =12 v i dq =100 ma p out =15 w frequency (mhz) gain vs frequency v dd =12 v i dq =100ma p out =15w power output vs power input v dd =12 v i dd =100 ma supply voltage (v) power output vs supply voltage v dd =12 v f=175 mhz p in =1.0 w 80 70 60 50 40 30 20 10 0 50 100 150 200 gain (db) 30 25 20 15 10 25 50 100 150 175 power output (w) 20 15 10 5 0 0.1 0.2 0.3 0.5 0.75 1 1.5 2 2.5 3 power input (w) 20 15 10 5 0 power output (w) 10 15 175mhz 100mhz 30mhz
3 rf power mosfet transistor 15w, 2-175mhz, 12v m/a-com products released; rohs compliant DU1215S ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. test fixture schematic test fixture assembly
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